Determination of Carbon and Oxygen Content in Silicon Single Crystal Low Temperature Fourier Transform Infrared Spectroscopy (English Version)
GB/T 35306-2023 is the latest national standard for the determination of carbon and oxygen content in silicon single crystals, replacing the original GB/T 35306-2017. The new standard has been comprehensively optimized in terms of method principles, scope of application and technical requirements to meet the increasingly stringent demand of the semiconductor industry for high-purity silicon materials.
Standard items | GB/T 35306—2017 | GB/T 35306—2023 |
---|---|---|
Scope of application | n-type silicon single crystal with room temperature resistivity greater than $1\Omega\cdot\mathrm{cm}$ | n-type silicon single crystal with room temperature resistivity greater than $1\Omega\cdot\mathrm{cm}$ and p-type silicon single crystal with room temperature resistivity greater than $3\Omega\cdot\mathrm{cm}$ |
Method principle | Based on Fourier transform infrared spectroscopy | Optimized the spectrum acquisition and processing technology under low temperature conditions |
Lower detection limit | $2.5\times10^{14}~\mathrm{cm}^{-3}$ | By improving the reference sample preparation method, the lower detection limit was reduced to $1\times10^{14}~\mathrm{cm}^{-3}$ |
Take a semiconductor company as an example, the application of the new standard has significantly improved the detection accuracy. By using a low temperature Fourier transform infrared spectrometer, the company has achieved real-time monitoring of the carbon and oxygen content in silicon single crystals during the production process to ensure that product quality meets international standards.
From GB/T 35306—2017 to GB/T 35306—2023, the main technical improvements include:
To ensure the effective implementation of the new standard:
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