GB/T 35306-2023

Determination of Carbon and Oxygen Content in Silicon Single Crystal Low Temperature Fourier Transform Infrared Spectroscopy (English Version)

GB/T 35306-2023
Standard No.
GB/T 35306-2023
Language
Chinese, Available in English version
Release Date
2023
Published By
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest
GB/T 35306-2023
Replace
GB/T 35306-2017
Scope
This document describes a method for the determination of substitutional carbon and interstitial oxygen content in silicon single crystals by low temperature Fourier transform infrared spectroscopy.
Introduction

1. Background and significance of standard formulation

GB/T 35306-2023 is the latest national standard for the determination of carbon and oxygen content in silicon single crystals, replacing the original GB/T 35306-2017. The new standard has been comprehensively optimized in terms of method principles, scope of application and technical requirements to meet the increasingly stringent demand of the semiconductor industry for high-purity silicon materials.

2. Comparison of standard frameworks

Standard items GB/T 35306—2017 GB/T 35306—2023
Scope of application n-type silicon single crystal with room temperature resistivity greater than $1\Omega\cdot\mathrm{cm}$ n-type silicon single crystal with room temperature resistivity greater than $1\Omega\cdot\mathrm{cm}$ and p-type silicon single crystal with room temperature resistivity greater than $3\Omega\cdot\mathrm{cm}$
Method principle Based on Fourier transform infrared spectroscopy Optimized the spectrum acquisition and processing technology under low temperature conditions
Lower detection limit $2.5\times10^{14}~\mathrm{cm}^{-3}$ By improving the reference sample preparation method, the lower detection limit was reduced to $1\times10^{14}~\mathrm{cm}^{-3}$

3. Practical application case analysis

Take a semiconductor company as an example, the application of the new standard has significantly improved the detection accuracy. By using a low temperature Fourier transform infrared spectrometer, the company has achieved real-time monitoring of the carbon and oxygen content in silicon single crystals during the production process to ensure that product quality meets international standards.

4. Analysis of Technological Evolution

From GB/T 35306—2017 to GB/T 35306—2023, the main technical improvements include:

  • Wavenumber range expansion: from $270~\mathrm{cm}^{-1}$ to $1250~\mathrm{cm}^{-1}$ to $270~\mathrm{cm}^{-1}$ to $1250~\mathrm{cm}^{-1}$
  • Improved sample preparation requirements: emphasizing double-sided mirror polishing technology to reduce the impact of surface defects on test results
  • Data processing optimization: introducing area method calculation to effectively reduce baseline noise interference

5. Implementation Suggestions

To ensure the effective implementation of the new standard:

  1. Equipment selection: Select a low-temperature Fourier transform infrared spectrometer that meets the requirements to ensure that its resolution and wavenumber range meet the test requirements.
  2. Sample preparation: Double-sided polishing is carried out in strict accordance with the standard requirements to avoid oxide layer and surface damage.
  3. Data processing: The area method is used to calculate the substitutional carbon and interstitial oxygen content to ensure the accuracy and reliability of the results.
  4. Quality control: Establish an internal quality control system, calibrate the instrument regularly and verify the accuracy of the test method.

GB/T 35306-2023 Referenced Document

  • GB/T 14264 Semiconductor material terminology*2024-04-25 Update
  • GB/T 29057 Practice for evaluating polycrystalline silicon rods by zone fusion pulling and spectroscopic analysis
  • GB/T 8170 Rules of rounding off for numerical values & expression and judgement of limiting values
  • GB/T 8322 Molecular absorption spectrometry.Terminology

GB/T 35306-2023 history

  • 2023 GB/T 35306-2023 Determination of Carbon and Oxygen Content in Silicon Single Crystal Low Temperature Fourier Transform Infrared Spectroscopy
  • 2017 GB/T 35306-2017 Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry



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