GB/T 42848-2023 (English Version)

Standard No.: GB/T 42848-2023
Language: Chinese, Available in English version
Release Date: 2023
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest: GB/T 42848-2023

Scope: This document specifies the general test methods for the electrical characteristics of direct digital frequency synthesizers (hereinafter referred to as "devices") in semiconductor integrated circuits. This document is applicable to the testing of single-channel and multi-channel direct digital frequency synthesizer circuits.

Introduction

Interpretation of GB/T 42848—2023 National Standard of the People's Republic of China

Test parameters	Definition and purpose	Test method
Logic input high level voltage ($V_{\mathrm{IH}}$)	The minimum high level voltage when the device is configured to a specified working state.	Use the test system to apply an excitation signal and measure whether the working state under this condition meets the standard.
Integral nonlinearity (INL)	The maximum deviation between the actual analog output and the ideal output.	Determine the fitting straight line through the mathematical fitting method, calculate the absolute value of the maximum deviation and divide it by 1 LSB voltage.

Implementation Suggestions

In actual applications, it is recommended that testers strictly follow the standard operating procedures and ensure that the calibration and environmental conditions of all equipment meet the regulations. For multi-channel devices, pay special attention to the isolation and phase difference tests between channels.

GB/T 42848-2023 Referenced Document

GB/T 17574 Semiconductor devices. Integrated circuits. Part 2: Digital integrated circuits

GB/T 42848-2023 history

2023 GB/T 42848-2023 Test method for direct digital frequency synthesizer of semiconductor integrated circuit